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www.irf.com 1 05/23/07 applicable directfet outline and substrate outline (see p.7,8 for details) fig 1. typical on-resistance vs. gate voltage fig 2. typical total gate charge vs gate-to-source voltage click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.32mh, r g = 25 ? , i as =15a. absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a max. 15 106 150 20 40 19 36 15 0 10203040 q g total gate charge (nc) 0 1 2 3 4 5 6 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v vds= 20v i d = 15a description the irf6616 combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an so-8 and only 0.7mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfe t package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the irf6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and s witching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest generation of processors operating at higher frequencies. the irf6616 is ideal for secondary side synchronous rectification applications up to 100w, an d can also be used in some non-isolated synchronous buck applications where 30v devices do not provide enough voltage headroom. sq sx st mq mx mt mp rohs compliant containing no lead or bormide low profile (<0.7 mm) dual sided cooling compatible ultra low package inductance optimized for high frequency switching low conduction and switching losses compatible with existing surface mount techniques lead-free 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 0 2.0 4.0 6.0 8.0 10 12 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c t j = 125c i d = 19a IRF6616PBF irf6616trpbf directfet power mosfet

v dss v gs r ds(on) r ds(on) 40v max 20v max 3.7m ? @ 10v 4.6m ? @ 4.5v q g tot q gd q gs2 q rr q oss v gs(th) 29nc 9.4nc 2.4nc 33nc 15nc 1.8v directfet isometric free datasheet http://
2 www.irf.com pulse width 400s; duty cycle 2%. repetitive rating; pulse width limited by max. junction temperature. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 40 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 37 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 3.7 5.0 m ? ??? 4.6 6.2 v gs(th) gate threshold voltage 1.35 1.8 2.25 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -5.5 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 75 ??? ??? s q g total gate charge ??? 29 44 q gs1 pre-vth gate-to-source charge ??? 8.6 ??? q gs2 post-vth gate-to-source charge ??? 2.4 ??? nc q gd gate-to-drain charge ??? 9.4 ??? q godr gate charge overdrive ??? 8.6 ??? see fig. 15 q sw switch charge (q gs2 + q gd ) ??? 12 ??? q oss output charge ??? 15 ??? nc r g gate resistance ??? 1.3 ??? ? t d(on) turn-on delay time ??? 15 ??? t r rise time ??? 19 ??? t d(off) turn-off delay time ??? 21 ??? ns t f fall time ??? 4.4 ??? c iss input capacitance ??? 3765 ??? c oss output capacitance ??? 560 ??? pf c rss reverse transfer capacitance ??? 285 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 110 (body diode) a i sm pulsed source current ??? ??? 150 (body diode) v sd diode forward voltage ??? 0.8 1.0 v t rr reverse recovery time ??? 15 23 ns q rr reverse recovery charge ??? 33 50 nc mosfet symbol clamped inductive load v ds = 20v, i d = 15a conditions ? = 1.0mhz v ds = 16v, v gs = 0v v gs = 20v v gs = -20v v ds = 32v, v gs = 0v v ds = 20v v ds = 32v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 19a v gs = 4.5v, i d = 15a v ds = v gs , i d = 250a t j = 25c, i f = 15a v gs = 4.5v i d = 15a v gs = 0v v ds = 20v i d = 15a v dd = 16v, v gs = 4.5v di/dt = 500a/s t j = 25c, i s = 15a, v gs = 0v showing the integral reverse p-n junction diode. free datasheet http://
www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient surface mounted on 1 in. square cu board, steady state. used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermocouple incontact with top (drain) of part. r is measured at t j of approximately 90c. surface mounted on 1 in. square cu board (still air).

with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 1.2801 0.000322 8.7256 0.164798 21.750 2.25760 13.251 69 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri a a 4 4 r 4 r 4 absolute maximum ratin g s parameter units p d @t a = 25c power dissipation w p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 45 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 1.4 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor w/c 1.8 0.022 270 -40 to + 150 max. 89 2.8 free datasheet http://
4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0.1 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 10v 60s pulse width t j = 25c t j = 150c t j = -40c 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 15a v gs = 10v v gs = 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c 2.5v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 2.5v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 0 20 40 60 80 100 120 140 160 i d , drain current (a) 2 4 6 8 10 12 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = 3.5v vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 10v free datasheet http://
www.irf.com 5 fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( c ) 1.0 1.5 2.0 2.5 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.7a 4.3a bottom 15a 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v free datasheet http://
6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15a. gate charge test circuit fig 15b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. switching time test circuit v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v free datasheet http://
www.irf.com 7 fig 18.

for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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" imperial min 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 min 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.616 0.020 0.08 max 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.676 0.080 0.17 code a b c d e f g h j k l m r p metric dimensions max 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007 directfet outline dimension, mx outline (medium size can, x-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. free datasheet http://
www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/2007

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reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6616). for 1000 parts on 7" reel, order irf6616tr1) standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c ' ()**! "+
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$,,-,-$ note: for the most current drawing please refer to ir website at http://www.irf.com/package/pkhexfet.html free datasheet http://
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ free datasheet http://

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